1600 degree Single-Zone High-Vacuum Triple Mass Flowmeter CVD tube furnace System

Chemical Vapor Deposition (CVD tube furnace System) is a process used to deposite thin films on substrates, widely applied in semiconductors, electronics, optics, and materials science. The CVD process involves introducing one or more volatile precursors into the reaction chamber, where they undergo chemical reactions or decomposition on the substrate surface to form the desired thin film deposition. The advantage of CVD technology lies in its ability to deposit high-quality films and precisely control the composition and properties of the deposited material.

CVD tube furnace System Product Overview：

Our chemical vapor eposition systemis an advanced equipment designed to achieve high-quality thin film deposition through CVD tube furnace System process. This system is suitable for precise coating of various materials, including semiconductors, electronic components, optical devices, and other high-tech applications.

CVD tube furnace System Product Features：

1. High Precision Control: Precise control of temperature, pressure, and gas flow ensures uniformity and reproducibility of the thin films.

2. Versatility: Suitable for depositing a wide range of materials, including metals, oxides, sulfides, and arsenides.

3. Flexibility: Customizable reaction chamber designs accommodate substrates of different sizes and shapes.

4. High Purity Films: Achieves high purity and high-quality thin films due to the ultra-high vacuum environment.

5. Automated Operation: User-friendly interface and automated control system simplify the operation process. 

Purchase Information： 

If you are interested in our CVD system, please contact us for more information and a quote.
Phone: 183-3926-3857
Email: jack@cysitech.com
Contact Person: Jack Yang
WeChat: 183 3926 3857

 CVD tube furnace System Technical parameters:

 Major parts：

Application Fields ：

The application of CVD is very widely, including but not limited to: 

Patterned Films and Transistor Structures in Semiconductor. 

Strain Engineering Films to Improve Conductivity through Compressive or Tensile Stress. 

III-V Semiconductor Material Manufacturing for LEDs and Lasers. 

Deposition of Silicon Films and Zinc Oxide in Solar Cells. 

Deposition of Superhard Coatings such as Diamond and Cubic Boron Nitride for Enhanced Tool Wear Resistance. 

Preparation of Corrosion-Resistant Coatings like Titanium Nitride and Titanium Carbide. 

Antireflective Coatings for Optical Components. 

Manufacture of Structural Materials and Functional Films in Microelectromechanical Systems (MEMS). 

Application Case: CVD Equipment for Silicon Dioxide (SiO2) Deposition on Wafers 

Required Equipment and Materials:

CVD Equipment

Silicon Dioxide Material

Wafer Samples

Vacuum Pump System

Argon (Ar) and Methane (CH4) or other carbon-containing gas supply systems

Temperature Control Devices (if sample temperature control is needed)

Cleaning Equipment (such as ultrasonic cleaners) 

Steps: 

1. Preparation Stage: 

Cleaning: Clean the wafer surface to remove dust, oil, and other contaminants, usually using ultrapure water and isopropanol for cleaning. 

2. Wafer Loading: 

Loading: Place the cleaned wafers onto the wafer carrier of the CVD equipment and ensure they are properly secured. 

3. Vacuum Pumping: 

Pumping: Start the vacuum pump to evacuate the CVD reaction chamber to a high vacuum state, typically within the range of 10^-6 to 10^-9 Torr. 

4. Substrate Preheating: 

Heating: Heat the wafers to a specific temperature to prepare for the chemical reaction. Preheating helps improve deposition quality. 

5. Gas Delivery: 

Introduction: Introduce precursor gases for silicon dioxide, such as silicon tetrachloride (SiCl4) or silane (SiH4), into the reaction chamber. 

6. Chemical Reaction: 

Deposition: When the precursor gases reach the heated wafer surface, a chemical reaction occurs, generating a silicon dioxide thin film. The reaction typically requires specific temperature and pressure conditions. 

7. Deposition Monitoring: 

Monitoring: Use monitoring tools such as a quartz crystal microbalance to measure the film thickness in real-time. 

8. Post-Deposition Treatment: 

Cooling: After deposition is complete, turn off the gas supply and heating system, allowing the wafers to cool naturally or quickly. 

9. Wafer Unloading: 

Removal: After pressure equalization, open the CVD reaction chamber and remove the wafers with the deposited silicon dioxide film. 

10. Post-Processing and Inspection: 

Processing: The deposited silicon dioxide film may require additional post-processing, such as annealing, to improve crystallinity and adhesion. 

Characterization: Use techniques like scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) to evaluate the film quality and performance. 

Equipment Cleaning and Maintenance:

Cleaning: After the experiment, clean the CVD equipment's reaction chamber and related components for future use.